7 GCA150BA60 igbt module sanrex igbt module GCA150BA60 is designed for high speed, high current switching applications. this module is electrically isolated and contains two igbts connected in series with a fast switching, soft recovery diode (trr= 0.1 s ) reverse connected across each igbt. i c 150a v ces 600v v ces sat 2.4v typ tf 0.10 s typ soft recovery diode applications inverter for motor control (vvvf) ups, ac servo dc power supply, welder maximum ratings unless otherwise tj 25 symbol item v ces collector-emitter voltage conditions with gate terminal shorted to emitter ratings GCA150BA60 unit v 600 v ges gate-emitter voltage with collector shorted to emitter v 20 ic collector current dc pulse ms a 150 i cp 300 ic reverse collector current a 150 p t total power dissipation tc 25 w 600 tj junction temperature 150 tstg storage temperature 40 125 v iso isolation voltage r.m.s. a.c. minute v 2500 mounting torque mounting 6 terminal 5 recommended value 2.5 3.9 25 40 n m kgf cm 4.7 48 recommended value 1.5 2.5 15 25 2.7 28 mass typical value g 225 eiectrical characteristics unless otherwise tj 25 symbol item i ges gate leakage current conditions v ge 20v v ce 0v ratings min. typ. max. unit na 500 i ces collector cut-off current v ce 600v v ge 0v ma 1.0 0 v br ces collector-emitter breakdown voltage v ge 0v ic ma v 600 v ge th gate threshold voltage v ce 10v ic 15ma v 3.0 2.4 0 7.0 0 v ce sat collector-emitter saturation voltage ic 150a v ge 15v v 9 .00 2.8 0 cies input capacitance v ce 10v v ge 0v f 1mhz nf 0.10 15 .00 tr switching time rise time turn-on delay time fall time turn-off delay time ic 150a v ge 15v / 5v vcc 300v r g 4 s 0.20 0.20 td on 0.10 0.40 tf emitter-collector voltage 0.40 0.20 td off 2.30 0.80 v ecs ic 150a v ge 0v v 0.1 0 2.80 trr reverse recovery time ic 150a v ge 10v di / dt 300a / s s 0.15 rth j-c thermal resistance igbt-case / w 0.21 diode-case 0.50 unit mm ul;e76102 m
8 GCA150BA60
9 GCA150BA60
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